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UPSC IES/ESE (Engineering Services) Electronics, Communication and Control Systems Syllabus

The Electronics, Communication and Control Systems syllabus for UPSC IES/ESE (Engineering Services) in full: 6 chapters, 24 topics and 6 sub-topics, every one listed below, plus 52 Electronics, Communication and Control Systems flashcards with answers.

6Chapters
24Topics
6Sub-topics
52Flashcards

Electronics, Communication and Control Systems syllabus: all 6 chapters

Expand any chapter to see its topics and sub-topics.

  1. Electronic Devices and Analog Circuits

    4 topics
    • Semiconductor physics, diodes and applications
    • BJT and FET biasing and amplifiers
    • Operational amplifiers and applications
      • Inverting and non-inverting configurations
      • Active filters and oscillators
    • Feedback amplifiers and power amplifiers
  2. Digital Electronics and Microprocessors

    4 topics
    • Number systems and Boolean algebra
    • Combinational and sequential logic circuits
    • Counters, registers and memories
    • Microprocessor and microcontroller architecture
  3. Signals and Systems

    4 topics
    • Continuous and discrete-time signals and systems
    • Fourier, Laplace and Z-transforms
    • Sampling theorem and aliasing
    • Linear time-invariant system analysis
  4. Analog and Digital Communication

    4 topics
    • Amplitude and angle modulation
    • Noise in communication systems
    • Pulse and digital modulation
      • PCM, DPCM and delta modulation
      • ASK, FSK, PSK and QAM
    • Information theory and coding basics
  5. Microwave, Antenna and Optical Communication

    4 topics
    • Transmission lines and waveguides
    • Microwave components and devices
    • Antenna fundamentals and radiation
    • Optical fibre communication and satellite systems
  6. Control Systems

    4 topics
    • Modelling and transfer functions of systems
    • Time and frequency domain analysis
      • Transient and steady-state response
      • Bode, Nyquist and root locus
    • Stability analysis and compensators
    • State-space analysis and controllability

UPSC IES/ESE (Engineering Services) Electronics, Communication and Control Systems flashcards — 52 questions with answers

  1. In an intrinsic semiconductor, how is the intrinsic carrier concentration $n_i$ related to $N_C$, $N_V$, the band gap $E_g$, and temperature $T$?

    $$n_i = \sqrt{N_C N_V}\, e^{-E_g/(2kT)}$$ where $n_i$ doubles roughly every $\sim 10\,^\circ\text{C}$ for Si and increases strongly with $T$.

  2. State the mass-action law for a doped semiconductor at thermal equilibrium.

    $n\,p = n_i^{2}$, independent of doping. For n-type $n \approx N_D$, $p = n_i^{2}/N_D$; for p-type $p \approx N_A$, $n = n_i^{2}/N_A$.

  3. Write the Shockley diode equation relating diode current $I$ to voltage $V$.

    $$I = I_S\left(e^{V/(\eta V_T)} - 1\right)$$ where $I_S$ is reverse saturation current, $\eta$ the ideality factor, and $V_T = kT/q \approx 26\ \text{mV}$ at $300\ \text{K}$.

  4. What is the typical cut-in (knee) voltage of Si and Ge diodes, and how does a Zener diode operate?

    Cut-in: Si $\approx 0.7\ \text{V}$, Ge $\approx 0.3\ \text{V}$. A Zener operates in reverse breakdown, maintaining a nearly constant voltage $V_Z$, used for voltage regulation.

  5. For a full-wave rectifier with capacitor filter, give the approximate peak-to-peak ripple voltage and ripple frequency.

    $$V_{r(pp)} \approx \frac{I_{dc}}{2 f C}$$ for full-wave (factor $\tfrac{1}{fC}$ for half-wave). Ripple frequency $= 2f$ for full-wave, $f$ for half-wave.

  6. In a BJT, define $\alpha$ and $\beta$ and give the relation between them.

    $\alpha = I_C/I_E$ (common-base gain), $\beta = I_C/I_B$ (common-emitter gain). $$\beta = \frac{\alpha}{1-\alpha}, \qquad \alpha = \frac{\beta}{1+\beta}$$ Also $I_E = I_C + I_B$.

  7. Why is voltage-divider (self) bias preferred for BJT amplifiers, and what is its stability condition?

    It makes the Q-point nearly independent of $\beta$ and temperature. Stability requires $R_{Th} \ll (1+\beta)R_E$, achieved by a stiff divider so $V_B$ is fixed and $I_C \approx (V_B - V_{BE})/R_E$.

  8. Give the small-signal transconductance $g_m$ of a BJT in terms of collector current.

    $$g_m = \frac{I_C}{V_T} \approx \frac{I_C}{26\ \text{mV}}$$ The input resistance $r_\pi = \beta/g_m$ and voltage gain (CE) $A_v = -g_m R_C$.

  9. Write the drain current equation of an n-channel JFET in the saturation (pinch-off) region.

    $$I_D = I_{DSS}\left(1 - \frac{V_{GS}}{V_P}\right)^{2}$$ where $I_{DSS}$ is the drain current at $V_{GS}=0$ and $V_P$ is the pinch-off voltage.

  10. Write the MOSFET drain current in saturation and the condition for saturation.

    $$I_D = \tfrac{1}{2}\mu_n C_{ox}\frac{W}{L}(V_{GS}-V_{th})^{2}$$ Saturation requires $V_{DS} \geq V_{GS} - V_{th}$ (i.e. $V_{GS} > V_{th}$ and channel pinched off).

  11. List the ideal op-amp assumptions (virtual short / virtual ground).

    Infinite open-loop gain, infinite input impedance ($I_+ = I_- = 0$), zero output impedance, infinite bandwidth. With negative feedback $V_+ = V_-$ (virtual short).

  12. Derive the closed-loop gain of an inverting op-amp amplifier.

    With virtual ground at the inverting input: $$A_v = -\frac{R_f}{R_1}$$ Input impedance $= R_1$; output is $180^\circ$ out of phase with input.

  13. Give the closed-loop gain of a non-inverting op-amp amplifier and its input impedance.

    $$A_v = 1 + \frac{R_f}{R_1}$$ Input impedance is ideally infinite. A voltage follower is the special case $R_f = 0$, $R_1 = \infty$, giving $A_v = 1$.

  14. For an ideal op-amp summing (inverting) amplifier with inputs $V_1, V_2, V_3$ through $R_1, R_2, R_3$ and feedback $R_f$, give $V_o$.

    $$V_o = -\left(\frac{R_f}{R_1}V_1 + \frac{R_f}{R_2}V_2 + \frac{R_f}{R_3}V_3\right)$$ If all input resistors equal $R$: $V_o = -\frac{R_f}{R}(V_1+V_2+V_3)$.

  15. Give the output of an ideal op-amp integrator and differentiator.

    Integrator: $$V_o = -\frac{1}{RC}\int V_{in}\,dt$$ Differentiator: $$V_o = -RC\frac{dV_{in}}{dt}$$

  16. Define slew rate and gain-bandwidth product of an op-amp.

    Slew rate $SR = \left.\frac{dV_o}{dt}\right|_{max}$ (V/$\mu$s), limits large-signal speed. Gain-bandwidth product $GBW = A_v \times f$ is constant for a single-pole op-amp; unity-gain bandwidth $f_T = A_{ol} f_{3dB}$.

  17. Classify active filters by response and give the order of roll-off per pole.

    Types: low-pass, high-pass, band-pass, band-stop, all-pass. Each pole gives $-20\ \text{dB/decade}$ ($-6\ \text{dB/octave}$); an $n$-th order filter rolls off at $-20n\ \text{dB/decade}$.

  18. State the Barkhausen criterion for sustained oscillation.

    Loop gain magnitude $|A\beta| = 1$ and total phase shift around the loop $= 0^\circ$ (or $360^\circ$). To start, $|A\beta| > 1$ initially.

  19. Give the oscillation frequency of an RC phase-shift oscillator and a Wien-bridge oscillator.

    Phase-shift (3 RC sections): $$f = \frac{1}{2\pi RC\sqrt{6}}$$ Wien-bridge: $$f = \frac{1}{2\pi RC}$$ with required gain $\geq 3$ (Wien) and $\geq 29$ (phase-shift).

  20. List the four feedback topologies and the parameter each stabilizes.

    Voltage-series (stabilizes voltage gain, $\uparrow R_i$, $\downarrow R_o$); current-series (transconductance); voltage-shunt (transresistance); current-shunt (current gain). Series feedback raises input R, shunt lowers it.

Show the other 32 Electronics, Communication and Control Systems flashcards
  1. How do negative feedback with gain $A$ and feedback factor $\beta$ affect gain and bandwidth?

    Closed-loop gain $$A_f = \frac{A}{1+A\beta}$$ Bandwidth increases by factor $(1+A\beta)$; gain-bandwidth product stays constant. Distortion and gain sensitivity reduce by $(1+A\beta)$.

  2. Compare Class A, B, AB, and C power amplifiers by conduction angle and max efficiency.

    Class A: $360^\circ$, $\eta_{max}=25\%$ (50% transformer-coupled). Class B: $180^\circ$, $\eta_{max}=78.5\%$. Class AB: slightly $>180^\circ$ (removes crossover distortion). Class C: $<180^\circ$, $\eta > 78.5\%$ (tuned RF).

  3. Convert decimal $45$ to binary, octal and hexadecimal.

    $45_{10} = 101101_2 = 55_8 = 2D_{16}$.

  4. State De Morgan's theorems in Boolean algebra.

    $$\overline{A+B} = \bar{A}\cdot\bar{B}, \qquad \overline{A\cdot B} = \bar{A}+\bar{B}$$ Generalized: complement the whole expression, complement each variable, and swap AND $\leftrightarrow$ OR.

  5. What is the 2's complement of an 8-bit number, and why is it used?

    2's complement $=$ (1's complement) $+ 1$, i.e. invert all bits and add 1. It allows subtraction by addition and gives a unique representation of zero; range for $n$ bits is $-2^{n-1}$ to $+2^{n-1}-1$.

  6. Why are NAND and NOR called universal gates?

    Any Boolean function can be implemented using only NAND gates or only NOR gates, since each can realize NOT, AND, and OR. This makes them universal building blocks.

  7. Distinguish combinational and sequential logic circuits.

    Combinational: output depends only on present inputs, no memory (e.g. adders, MUX, decoders). Sequential: output depends on present inputs and past state, uses memory/feedback and a clock (e.g. flip-flops, counters, registers).

  8. Give the sum and carry equations for a full adder.

    $$S = A \oplus B \oplus C_{in}$$ $$C_{out} = AB + (A \oplus B)C_{in}$$

  9. What is the characteristic (next-state) equation of a JK flip-flop?

    $$Q_{n+1} = J\bar{Q}_n + \bar{K}Q_n$$ With $J=K=1$ it toggles; $J=K=0$ holds; $J=1,K=0$ sets; $J=0,K=1$ resets.

  10. Distinguish a multiplexer from a demultiplexer and give line counts.

    MUX: $2^n$ data inputs $\to$ 1 output, selected by $n$ select lines (data selector). DEMUX: 1 input $\to 2^n$ outputs via $n$ select lines (data distributor).

  11. Compare synchronous and asynchronous (ripple) counters.

    Asynchronous/ripple: clock applied only to first FF, others triggered by previous output; cumulative propagation delay, slower. Synchronous: all FFs share a common clock, faster, no cumulative delay but more logic.

  12. What is the modulus of a counter and how many flip-flops are needed for a mod-N counter?

    Modulus = number of unique states before repeating. A mod-$N$ counter needs $n$ flip-flops where $2^{n-1} < N \leq 2^{n}$, i.e. $n = \lceil \log_2 N \rceil$.

  13. Compare SRAM, DRAM, and the meaning of volatile vs non-volatile memory.

    SRAM: flip-flop based, fast, no refresh, low density, used for cache. DRAM: capacitor based, needs periodic refresh, high density, slower, main memory. Both are volatile (lose data on power off); ROM/Flash/EEPROM are non-volatile.

  14. Name the register types by data transfer and give examples.

    SISO, SIPO, PISO, PIPO shift registers. SIPO does serial-to-parallel conversion; PISO does parallel-to-serial. A universal shift register can do all modes plus bidirectional shifting.

  15. State the basic functional units of a microprocessor (e.g. 8085) architecture.

    ALU, registers (accumulator, general-purpose, temporary), instruction register/decoder, program counter, stack pointer, timing and control unit, address/data bus, flag register. Buses: address (output), data (bidirectional), control.

  16. Differentiate a microprocessor from a microcontroller.

    Microprocessor: CPU only; memory, I/O, timers are external (general-purpose). Microcontroller: CPU + RAM + ROM + I/O ports + timers + serial on one chip (embedded, application-specific, lower cost/power).

  17. Differentiate Von Neumann and Harvard architectures.

    Von Neumann: single shared memory and bus for instructions and data (simpler, bus bottleneck). Harvard: separate memories and buses for instructions and data (parallel fetch, faster; used in many microcontrollers/DSPs).

  18. Classify signals: continuous vs discrete-time, and energy vs power signals.

    Continuous-time: defined for all $t$; discrete-time: defined only at integer $n$. Energy signal: $0 < E < \infty$, $P=0$ (aperiodic). Power signal: $0 < P < \infty$, $E=\infty$ (periodic/random).

  19. State the conditions for a system to be linear and time-invariant (LTI).

    Linear: satisfies superposition (additivity + homogeneity). Time-invariant: a time shift in input produces an identical shift in output, $x(t-t_0) \to y(t-t_0)$. LTI systems are fully characterized by their impulse response $h(t)$.

  20. How is the output of an LTI system obtained from input and impulse response?

    By convolution: $$y(t) = x(t) * h(t) = \int_{-\infty}^{\infty} x(\tau)h(t-\tau)\,d\tau$$ Discrete: $y[n] = \sum_{k=-\infty}^{\infty} x[k]h[n-k]$.

  21. State the BIBO stability condition for a continuous-time LTI system.

    The impulse response must be absolutely integrable: $$\int_{-\infty}^{\infty} |h(t)|\,dt < \infty$$ Equivalently, all poles of $H(s)$ lie in the left half of the $s$-plane.

  22. Define the Fourier transform pair for a continuous-time signal.

    $$X(\omega) = \int_{-\infty}^{\infty} x(t)e^{-j\omega t}\,dt$$ $$x(t) = \frac{1}{2\pi}\int_{-\infty}^{\infty} X(\omega)e^{j\omega t}\,d\omega$$

  23. Define the bilateral Laplace transform and its relation to the Fourier transform.

    $$X(s) = \int_{-\infty}^{\infty} x(t)e^{-st}\,dt, \quad s = \sigma + j\omega$$ Setting $\sigma=0$ (i.e. $s=j\omega$) gives the Fourier transform, valid when the ROC includes the $j\omega$-axis.

  24. Define the Z-transform and the region of convergence (ROC) significance.

    $$X(z) = \sum_{n=-\infty}^{\infty} x[n]z^{-n}$$ The ROC determines causality/stability: for a causal system the ROC is outside the outermost pole; stability requires the ROC to include the unit circle $|z|=1$.

  25. State the Nyquist sampling theorem.

    A bandlimited signal with maximum frequency $f_m$ is fully recoverable if sampled at $$f_s \geq 2 f_m$$ The minimum rate $f_s = 2f_m$ is the Nyquist rate; the bound $f_s/2$ is the Nyquist frequency.

  26. What is aliasing and how is it prevented?

    Aliasing is the overlap of spectral images when $f_s < 2f_m$, causing high frequencies to masquerade as lower ones (irrecoverable distortion). Prevented by an anti-aliasing low-pass filter before sampling and/or sampling above the Nyquist rate.

  27. For AM (DSB-FC) $s(t)=A_c[1+\mu\cos\omega_m t]\cos\omega_c t$, give the power efficiency and transmission bandwidth.

    Efficiency $$\eta = \frac{\mu^{2}}{2+\mu^{2}}$$ (max $33.3\%$ at $\mu=1$). Bandwidth $BW = 2f_m$. Total power $P_t = P_c\left(1+\frac{\mu^{2}}{2}\right)$.

  28. Define modulation index for FM and PM, and give Carson's rule bandwidth for FM.

    FM: $\beta = \Delta f / f_m$; PM: $\beta = k_p A_m$. Carson's rule: $$BW \approx 2(\Delta f + f_m) = 2 f_m(\beta + 1)$$

  29. Define noise figure and give Friis' formula for cascaded stages.

    Noise figure $F = \dfrac{(S/N)_{in}}{(S/N)_{out}} \geq 1$. Cascade: $$F = F_1 + \frac{F_2-1}{G_1} + \frac{F_3-1}{G_1 G_2} + \cdots$$ so the first stage gain/noise dominates.

  30. Compare ASK, FSK and PSK digital modulation schemes.

    ASK: amplitude switched (simple, noise-sensitive). FSK: frequency switched (constant envelope, more bandwidth). PSK: phase switched (best noise immunity for given power; BPSK is most robust). PSK/FSK outperform ASK in BER.

  31. Outline the PCM process and give the quantization SNR for an n-bit uniform quantizer.

    Steps: sample $\to$ quantize $\to$ encode (binary). For $n$ bits with a sinusoidal full-scale input: $$\text{SNR}_{dB} \approx 6.02n + 1.76$$ (about 6 dB improvement per added bit).

  32. Compare DPCM and Delta Modulation, and name the two distortions of delta modulation.

    DPCM encodes the difference between a sample and its prediction (multi-bit), reducing bit rate. Delta modulation is 1-bit DPCM transmitting only sign of the difference. DM distortions: slope-overload (step too small for fast changes) and granular/hunting noise (step too large for slow changes).

UPSC IES/ESE (Engineering Services) Electronics, Communication and Control Systems FAQ

What is in the UPSC IES/ESE (Engineering Services) Electronics, Communication and Control Systems syllabus?

UPSC IES/ESE (Engineering Services) Electronics, Communication and Control Systems is split into 6 chapters: Electronic Devices and Analog Circuits, Digital Electronics and Microprocessors, Signals and Systems, Analog and Digital Communication, Microwave, Antenna and Optical Communication and Control Systems. Together they contain 24 topics and 6 sub-topics.

How many chapters are in UPSC IES/ESE (Engineering Services) Electronics, Communication and Control Systems?

6 chapters, containing 24 topics and 6 sub-topics. The largest chapter is Electronic Devices and Analog Circuits, with 4 topics.

Are there flashcards for UPSC IES/ESE (Engineering Services) Electronics, Communication and Control Systems?

Yes — a 52-card Electronics, Communication and Control Systems deck, printed in full in the flashcards section of this page and available in the Examius app with spaced repetition. The free plan covers one exam of your choice, including its flashcards; Examius Pro, a one-time purchase, unlocks every other exam and deck.