🇮🇳 UPSC ESE E&T · subject
UPSC ESE E&T Electronics Engineering Syllabus
The Electronics Engineering syllabus for UPSC ESE E&T in full: 3 chapters and 15 topics, every one listed below, plus 51 Electronics Engineering flashcards with answers.
Electronics Engineering syllabus: all 3 chapters
Expand any chapter to see its topics and sub-topics.
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Basic Electronics Engineering
5 topics- Diodes
- Transistors
- Operational Amplifiers
- Oscillators
- Voltage Regulators
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Digital Electronics
6 topics- Number Systems
- Logic Gates
- Flip-Flops
- Counters
- Shift Registers
- Microprocessors and Microcontrollers
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Analog Electronics
4 topics- Small Signal Analysis
- Large Signal Analysis
- Feedback Amplifiers
- Power Amplifiers
UPSC ESE E&T Electronics Engineering flashcards — 51 questions with answers
What is the threshold (cut-in) voltage for a silicon and a germanium PN-junction diode?
Silicon ≈ 0.7 V; Germanium ≈ 0.3 V. Below this forward voltage the diode conducts negligibly.
State the Shockley diode equation relating diode current to applied voltage.
I = I_S (e^(V/(ηV_T)) − 1), where I_S is reverse saturation current, η is the ideality factor (1–2), and V_T = kT/q ≈ 26 mV at room temperature.
How does a Zener diode operate and what is its main application?
It is operated in reverse breakdown, where voltage stays nearly constant despite current changes. Main use: voltage regulation/reference.
Differentiate Zener breakdown from Avalanche breakdown in diodes.
Zener breakdown occurs in heavily doped junctions at low voltage (<5–6 V) due to strong field tunneling and has a negative temperature coefficient. Avalanche occurs in lightly doped junctions at higher voltage via carrier multiplication (impact ionization) and has a positive temperature coefficient.
For a full-wave bridge rectifier with sinusoidal input, give the ripple factor and rectification efficiency.
Ripple factor ≈ 0.48; maximum rectification efficiency ≈ 81.2%. (Half-wave: ripple factor 1.21, efficiency 40.6%.)
In a full-wave center-tapped rectifier, what is the Peak Inverse Voltage (PIV) across each diode?
PIV = 2V_m (twice the peak of one half of the secondary), whereas in a bridge rectifier PIV = V_m.
What are the three operating regions of a BJT and the junction bias conditions for each?
Active: emitter junction forward-biased, collector junction reverse-biased. Saturation: both junctions forward-biased. Cutoff: both junctions reverse-biased.
Define the BJT current gains α and β and give the relationship between them.
α = I_C/I_E (common-base gain, <1); β = I_C/I_B (common-emitter gain). Relationship: β = α/(1−α) and α = β/(1+β).
Compare the three BJT amplifier configurations (CE, CB, CC) in terms of gain and impedance.
CE: high voltage & current gain, medium input/output impedance, 180° phase shift. CB: high voltage gain, current gain <1, low input/high output impedance. CC (emitter follower): voltage gain ≈1, high current gain, high input/low output impedance — used for buffering.
What distinguishes a JFET, a depletion-MOSFET, and an enhancement-MOSFET?
JFET: always normally-ON, controlled by reverse-biased gate. Depletion MOSFET: normally-ON, works in both depletion and enhancement. Enhancement MOSFET: normally-OFF, conducts only when |V_GS| exceeds threshold V_T.
Write the MOSFET drain current equation in saturation (active) region.
I_D = (1/2) μ_n C_ox (W/L)(V_GS − V_T)^2 (1 + λ V_DS), often written I_D = K(V_GS − V_T)^2.
List the ideal characteristics of an operational amplifier.
Infinite open-loop gain, infinite input impedance, zero output impedance, infinite bandwidth, infinite CMRR, zero offset voltage, and zero input bias current.
What are the two 'golden rules' of an ideal op-amp in negative feedback?
1) No current flows into either input terminal (infinite input impedance). 2) The voltage difference between the two inputs is zero — the 'virtual short' (V+ = V−).
Give the closed-loop gain of an inverting and a non-inverting op-amp amplifier.
Inverting: A = −R_f/R_1. Non-inverting: A = 1 + R_f/R_1.
Define CMRR for an op-amp and give its expression.
Common-Mode Rejection Ratio = ratio of differential gain to common-mode gain: CMRR = A_d/A_cm, usually expressed in dB as 20 log10(A_d/A_cm). Higher is better.
What is the slew rate of an op-amp and how does it limit performance?
Slew rate = maximum rate of change of output voltage (V/µs), SR = dV_out/dt|max. It limits the maximum frequency for a given output amplitude (full-power bandwidth f = SR/(2πV_peak)).
State the Barkhausen criterion for sustained oscillations.
Loop gain magnitude |Aβ| = 1 and total phase shift around the loop = 0° (or 360°). Together they sustain oscillations at the desired frequency.
Give the frequency of oscillation for a Wien-bridge oscillator (equal R and C).
f = 1/(2πRC), with the amplifier gain set to ≥3 to satisfy Barkhausen criterion.
Give the frequency of oscillation and gain condition for an RC phase-shift oscillator.
f = 1/(2πRC√6); the amplifier must provide a gain of at least 29 to overcome the feedback network attenuation.
Give the oscillation frequency for Hartley and Colpitts LC oscillators.
Both: f = 1/(2π√(LC_eq)). Hartley uses tapped inductors (L = L1+L2+2M), Colpitts uses series capacitors (C = C1C2/(C1+C2)).
Show the other 31 Electronics Engineering flashcards
For a Zener shunt voltage regulator, what condition keeps the Zener in regulation?
The Zener current must remain between I_Z(min) and I_Z(max) for all input voltage and load current variations; load voltage stays at V_Z.
Define line regulation and load regulation of a voltage regulator.
Line regulation = change in output voltage per unit change in input voltage (ΔV_out/ΔV_in). Load regulation = change in output voltage per unit change in load current (ΔV_out/ΔI_load). Lower values mean better regulation.
How does a series-pass linear regulator differ from a switching regulator in efficiency?
Linear (series-pass) regulators dissipate excess voltage as heat → low efficiency (~30–60%). Switching regulators rapidly switch a transistor and use LC filtering → high efficiency (~80–95%).
Convert the binary number 1011 to decimal.
1011₂ = 8 + 0 + 2 + 1 = 11₁₀.
What is the 2's complement of the 8-bit binary number 00101100?
Invert to 11010011, then add 1 → 11010100. (Represents −44.)
State the range of signed integers representable in n-bit 2's complement form.
From −2^(n−1) to +2^(n−1) − 1. For 8 bits: −128 to +127.
How do you convert a binary number to its equivalent Gray code?
The MSB stays the same; each subsequent Gray bit = XOR of the current and previous binary bit. Gray code changes only one bit between consecutive values.
Write the truth-table behavior of a 2-input NAND gate and state why it is universal.
Output is 0 only when both inputs are 1; otherwise 1 (Y = (A·B)'). It is 'universal' because any logic function (NOT, AND, OR) can be built using only NAND gates.
Give the Boolean output expressions for XOR and XNOR gates.
XOR: Y = A⊕B = A'B + AB' (1 when inputs differ). XNOR: Y = (A⊕B)' = AB + A'B' (1 when inputs are equal).
State both forms of De Morgan's theorems.
(A·B)' = A' + B' and (A + B)' = A'·B'. The complement of a product is the sum of complements, and vice versa.
What is the difference between a half-adder and a full-adder?
Half-adder adds two bits: Sum = A⊕B, Carry = AB. Full-adder adds three bits (A, B, Cin): Sum = A⊕B⊕Cin, Cout = AB + Cin(A⊕B).
Compare a combinational circuit with a sequential circuit.
Combinational: output depends only on present inputs, no memory (e.g., adders, mux). Sequential: output depends on present inputs and past state, uses memory/clock (e.g., flip-flops, counters).
Describe the operation of an SR latch and its forbidden input condition.
S=1,R=0 → Set (Q=1); S=0,R=1 → Reset (Q=0); S=0,R=0 → hold previous state. S=1,R=1 is forbidden/invalid (indeterminate output).
Give the characteristic (excitation) behavior of a JK flip-flop for each input combination.
J=0,K=0 → no change; J=0,K=1 → reset (Q=0); J=1,K=0 → set (Q=1); J=1,K=1 → toggle (Q = Q'). Characteristic eq: Q(n+1) = JQ' + K'Q.
What is the function of a D flip-flop and a T flip-flop?
D flip-flop: Q(n+1) = D — output follows input at the clock edge (data/delay storage). T flip-flop: Q(n+1) = T⊕Q — toggles output when T=1, holds when T=0.
What problem does a master-slave flip-flop solve and how?
It eliminates the race-around condition (multiple toggles within one clock pulse) in level-triggered JK flip-flops by cascading two latches that respond on opposite clock levels, making it effectively edge-triggered.
Differentiate asynchronous (ripple) counters from synchronous counters.
Asynchronous: flip-flops triggered by the previous stage's output, causing cumulative propagation delay (slow). Synchronous: all flip-flops share a common clock, so they switch simultaneously (faster, no ripple delay).
How many flip-flops are required for a MOD-N counter, and what is the count range of a 4-bit counter?
Number of flip-flops = smallest n such that 2^n ≥ N. A 4-bit counter has 2^4 = 16 states, counting 0 to 15 (MOD-16).
What is a ring counter and a Johnson (twisted-ring) counter, and how many states does each have for n flip-flops?
Ring counter: a single 1 circulates; n distinct states. Johnson counter: complemented output fed back; 2n distinct states.
List the four basic data movement modes of a shift register.
SISO (Serial-In Serial-Out), SIPO (Serial-In Parallel-Out), PISO (Parallel-In Serial-Out), and PIPO (Parallel-In Parallel-Out).
What is a universal shift register?
A register capable of all operations: serial-in/out, parallel-in/out, and bidirectional (left and right) shifting, selected via mode-control inputs (e.g., the 74194).
Differentiate a microprocessor from a microcontroller.
Microprocessor: CPU only; RAM, ROM, I/O, timers are external (general-purpose computing). Microcontroller: CPU plus RAM, ROM, I/O ports, timers on a single chip (embedded/dedicated control applications).
Contrast Von Neumann and Harvard architectures.
Von Neumann: single shared memory and bus for both instructions and data (e.g., 8085). Harvard: separate memories and buses for program and data, allowing simultaneous fetch (e.g., 8051), giving higher throughput.
State the address bus width, data bus width, and number of addressable memory locations of the Intel 8085.
16-bit address bus → 2^16 = 64 KB addressable memory; 8-bit data bus (8-bit microprocessor).
What is small-signal analysis and what assumption underlies it?
It analyzes amplifier behavior for small AC variations about the DC operating (Q) point, assuming the device behaves linearly over that small range so nonlinear characteristics can be replaced by linear equivalent (h-parameter / hybrid-π) models.
In the hybrid-π model of a BJT, give the expressions for transconductance gm and input resistance rπ.
gm = I_C/V_T (≈ I_C/26 mV at room temp); rπ = β/gm = βV_T/I_C.
What is large-signal analysis and how does it differ from small-signal analysis?
Large-signal analysis handles big input swings where the device operates over its full nonlinear characteristic (used for power amplifiers, switching, Q-point/load-line design). Unlike small-signal, linear approximation around Q-point is not valid.
Name the four basic feedback amplifier topologies and the quantity each stabilizes.
Voltage-series (stabilizes voltage gain, ↑Rin, ↓Rout), current-series (transconductance), voltage-shunt (transresistance, ↓Rin, ↓Rout), and current-shunt (current gain).
State the effect of negative feedback on gain, bandwidth, and distortion.
Closed-loop gain A_f = A/(1+Aβ) is reduced by factor (1+Aβ); bandwidth is increased by the same factor (gain-bandwidth product constant); distortion and noise are reduced by (1+Aβ); stability improves.
Compare the maximum theoretical efficiency of Class A, Class B, and Class AB power amplifiers.
Class A: 25% (capacitive/transformerless) up to 50% (transformer-coupled), conducts 360°. Class B: ~78.5%, conducts 180° (push-pull). Class AB: between Class A and B (~60–78%), conducts >180° to reduce crossover distortion.
What causes crossover distortion in a Class B push-pull amplifier and how is it eliminated?
It occurs near zero crossing because neither transistor conducts until its base-emitter threshold (~0.7 V) is reached. It is eliminated by slightly forward-biasing the transistors (Class AB operation) using diodes or a V_BE multiplier.
UPSC ESE E&T Electronics Engineering FAQ
What is in the UPSC ESE E&T Electronics Engineering syllabus?
UPSC ESE E&T Electronics Engineering is split into 3 chapters: Basic Electronics Engineering, Digital Electronics and Analog Electronics. Together they contain 15 topics.
How many chapters are in UPSC ESE E&T Electronics Engineering?
3 chapters, containing 15 topics. The largest chapter is Digital Electronics, with 6 topics.
Are there flashcards for UPSC ESE E&T Electronics Engineering?
Yes — a 51-card Electronics Engineering deck, printed in full in the flashcards section of this page and available in the Examius app with spaced repetition. The free plan covers one exam of your choice, including its flashcards; Examius Pro, a one-time purchase, unlocks every other exam and deck.