🇮🇳 GATE Electrical Engineering · subject
GATE Electrical Engineering Power Electronics Syllabus
The Power Electronics syllabus for GATE Electrical Engineering in full: 9 chapters and 6 topics, every one listed below, plus 51 Power Electronics flashcards with answers.
Power Electronics syllabus: all 9 chapters
Expand any chapter to see its topics and sub-topics.
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Static V-I characteristics and firing/gating circuits
3 topics- Thyristor
- MOSFET
- IGBT
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DC to DC conversion
3 topics- Buck Converter
- Boost Converter
- Buck-Boost Converter
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Single and three-phase configuration of uncontrolled rectifiers
overviewNo separate topics listed for this chapter.
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Voltage and Current commutated Thyristor based converters
overviewNo separate topics listed for this chapter.
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Bidirectional ac to dc voltage source converters
overviewNo separate topics listed for this chapter.
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Magnitude and Phase of line current harmonics for uncontrolled and thyristor based converters
overviewNo separate topics listed for this chapter.
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Power factor and Distortion Factor of ac to dc converters
overviewNo separate topics listed for this chapter.
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Single-phase and three-phase voltage and current source inverters
overviewNo separate topics listed for this chapter.
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Sinusoidal pulse width modulation
overviewNo separate topics listed for this chapter.
GATE Electrical Engineering Power Electronics flashcards — 51 questions with answers
What is a thyristor (SCR), and how many layers and junctions does it have?
A thyristor (Silicon Controlled Rectifier) is a four-layer ($P\text{-}N\text{-}P\text{-}N$), three-junction ($J_1, J_2, J_3$), three-terminal (anode, cathode, gate) unidirectional power switch that conducts current in one direction once triggered.
List the three terminals of a thyristor (SCR).
Anode (A), Cathode (K), and Gate (G).
What are the three modes of operation of a thyristor?
Forward blocking mode (off), forward conduction mode (on), and reverse blocking mode (off).
How is a thyristor turned ON?
By applying a positive gate current pulse $I_G$ while the device is forward biased (anode positive w.r.t. cathode). Once latched, it stays on even after the gate signal is removed.
What is the latching current $I_L$ of a thyristor?
The minimum anode current required to keep the thyristor in the ON state immediately after it has been triggered and the gate signal removed. It is typically 2–3 times the holding current.
What is the holding current $I_H$ of a thyristor?
The minimum anode current required to maintain conduction. If the anode current falls below $I_H$, the thyristor turns off. Generally $I_L > I_H$.
Why can a thyristor not be turned OFF by the gate?
Because the regenerative (latching) action of the two internal coupled transistors ($\alpha_1 + \alpha_2 \geq 1$) keeps it conducting; the gate loses control once latched. It must be turned off by reducing anode current below $I_H$ (commutation).
State the two-transistor model condition for a thyristor to turn ON.
The SCR latches when the sum of the common-base current gains satisfies $\alpha_1 + \alpha_2 \geq 1$.
What is the difference between natural (line) commutation and forced commutation of a thyristor?
Natural/line commutation: the AC supply itself drives the anode current below $I_H$ (used in AC circuits/converters). Forced commutation: external L–C circuitry forces the current to zero in DC circuits (used in choppers/inverters).
Define the $\frac{di}{dt}$ rating of a thyristor.
The maximum permissible rate of rise of anode current. Exceeding it causes local hot-spot heating near the gate-cathode junction (current cannot spread fast enough), damaging the device. A series inductor limits $\frac{di}{dt}$.
Define the $\frac{dv}{dt}$ rating of a thyristor and how it is protected.
The maximum rate of rise of forward anode-cathode voltage; exceeding it causes false turn-on via junction capacitance charging current $i = C_j\frac{dv}{dt}$. Protected by a snubber (RC) circuit across the device.
What is a snubber circuit used with a thyristor?
An $R\text{-}C$ network connected across the thyristor to limit $\frac{dv}{dt}$ and suppress voltage transients, preventing accidental (false) turn-on.
What is the typical V-I characteristic feature distinguishing thyristor forward conduction from forward blocking?
In forward blocking, only small leakage current flows up to the forward breakover voltage $V_{BO}$; after triggering, the device switches to the low-voltage, high-current forward conduction branch. Higher gate current reduces the required $V_{BO}$.
What type of device is a MOSFET (in power electronics), and is it voltage- or current-controlled?
A power MOSFET is a majority-carrier, voltage-controlled, three-terminal (gate, drain, source) unipolar device. It is controlled by gate-source voltage $V_{GS}$ and draws essentially zero steady-state gate current.
Name the three terminals of a MOSFET.
Gate (G), Drain (D), and Source (S).
What is the threshold voltage $V_{th}$ (or $V_{GS(th)}$) of a MOSFET?
The minimum gate-to-source voltage required to form a conducting channel and turn the MOSFET on. For an n-channel enhancement MOSFET, conduction begins when $V_{GS} > V_{th}$.
Why are power MOSFETs preferred for high-frequency switching applications?
Because they are majority-carrier devices with no minority-carrier storage, giving very fast switching speeds and low switching losses; they switch at much higher frequencies than BJTs or thyristors.
What is $R_{DS(on)}$ in a power MOSFET and why does it matter?
It is the drain-to-source on-state resistance. Conduction loss is $P_{cond} = I_D^{2} R_{DS(on)}$. A low $R_{DS(on)}$ reduces conduction losses; it increases with temperature (positive temperature coefficient).
Why do MOSFETs have a positive temperature coefficient of $R_{DS(on)}$, and what advantage does this give?
As temperature rises, $R_{DS(on)}$ increases, so current decreases. This negative-feedback effect allows easy paralleling of MOSFETs because they share current automatically and avoid thermal runaway.
In saturation (active) region, give the MOSFET drain current equation.
$$I_D = \frac{1}{2}\,k\,(V_{GS} - V_{th})^{2}$$ where $k = \mu_n C_{ox}\frac{W}{L}$ is the transconductance parameter.
Show the other 31 Power Electronics flashcards
What is the body diode of a power MOSFET?
An intrinsic parasitic $P\text{-}N$ diode formed between the source (body) and drain, which conducts in the reverse direction. It is useful as a freewheeling diode but has a relatively slow reverse recovery.
What does IGBT stand for and what two devices does it combine?
Insulated Gate Bipolar Transistor. It combines the voltage-controlled (insulated) gate of a MOSFET with the high-current, low-conduction-loss bipolar output of a BJT.
Name the three terminals of an IGBT.
Gate (G), Collector (C), and Emitter (E).
Is an IGBT voltage-controlled or current-controlled, and is it a majority- or minority-carrier device?
It is voltage-controlled (via gate-emitter voltage $V_{GE}$) like a MOSFET, but it is a minority-carrier (bipolar conduction) device in its output, giving low on-state voltage drop at high currents.
Compare the on-state voltage drop of an IGBT versus a power MOSFET at high current.
The IGBT has a nearly constant, low saturation voltage $V_{CE(sat)}$ (bipolar conduction) so it conducts high current with low loss, whereas the MOSFET's drop $I_D R_{DS(on)}$ rises with current. Hence IGBTs are favored at high voltage/high current.
What is the 'tail current' problem in an IGBT?
During turn-off, stored minority carriers in the drift region recombine slowly, producing a residual collector 'tail current' that increases turn-off switching loss and limits the switching frequency.
Give a typical application domain comparison: MOSFET vs IGBT vs thyristor by frequency/power.
MOSFET: low-to-medium power, high frequency (>100 kHz). IGBT: medium-to-high power, medium frequency (a few kHz to ~50 kHz). Thyristor/SCR: very high power, low frequency (line frequency, DC drives, HVDC).
Rank MOSFET, IGBT, and BJT/thyristor by switching speed (fastest first).
MOSFET (fastest) > IGBT (intermediate) > BJT/Thyristor (slowest). MOSFETs have no minority-carrier storage; IGBTs have a turn-off tail; thyristors are slow latching devices.
What is a buck converter and what is its basic function?
A buck (step-down) converter is a DC-DC switching converter whose average output voltage is less than or equal to the input voltage. It steps the voltage down while ideally stepping the current up.
State the voltage conversion ratio of an ideal buck converter in continuous conduction mode (CCM).
$$\frac{V_o}{V_{in}} = D$$ where $D$ is the duty cycle ($0 \leq D \leq 1$). Since $D \leq 1$, $V_o \leq V_{in}$.
For an ideal (lossless) buck converter, express the input/output current relationship.
From power balance $V_{in}I_{in} = V_o I_o$, with $V_o = D V_{in}$, the average input current is $I_{in} = D\,I_o$, so the output current is stepped up by $\frac{1}{D}$.
Name the four main components of a basic buck converter.
A controlled switch (MOSFET/IGBT), a freewheeling diode, an inductor $L$, and an output filter capacitor $C$ (across the load).
In a buck converter, what is the inductor voltage during the switch-ON interval?
During ON time, $v_L = V_{in} - V_o$ (positive), so the inductor current rises with slope $\frac{di_L}{dt} = \frac{V_{in}-V_o}{L}$.
In a buck converter, what is the inductor voltage during the switch-OFF interval?
During OFF time the inductor freewheels through the diode and $v_L = -V_o$, so the current falls with slope $\frac{di_L}{dt} = -\frac{V_o}{L}$.
What is a boost converter and its basic function?
A boost (step-up) converter is a DC-DC switching converter whose average output voltage is greater than or equal to the input voltage. It steps the voltage up while stepping the current down.
State the voltage conversion ratio of an ideal boost converter in CCM.
$$\frac{V_o}{V_{in}} = \frac{1}{1-D}$$ where $D$ is the duty cycle. As $D \to 1$, $V_o \to \infty$ (ideally), so $V_o \geq V_{in}$.
Name the four main components of a basic boost converter.
An input inductor $L$ (in series with the source), a controlled switch (MOSFET/IGBT), a diode, and an output capacitor $C$ across the load.
In a boost converter, what happens during the switch-ON interval?
The switch shorts the inductor to ground; the inductor charges with $v_L = V_{in}$ and current rises ($\frac{di_L}{dt} = \frac{V_{in}}{L}$). The diode is reverse-biased, and the load is supplied by the output capacitor.
In a boost converter, what happens during the switch-OFF interval?
The inductor current flows through the diode to the load; the inductor voltage is $v_L = V_{in} - V_o$ (negative), releasing stored energy so that $V_o > V_{in}$.
For an ideal boost converter, express the average input current in terms of output current.
From power balance and $V_o = \frac{V_{in}}{1-D}$: $I_{in} = \frac{I_o}{1-D}$, i.e. the input (inductor) current is larger than the output current.
What is a buck-boost converter and its function?
A buck-boost converter is a DC-DC switching converter that can produce an output voltage either lower or higher than the input, typically with inverted (opposite) polarity.
State the voltage conversion ratio of an ideal inverting buck-boost converter in CCM.
$$\frac{V_o}{V_{in}} = -\frac{D}{1-D}$$ The magnitude is less than $V_{in}$ for $D<0.5$ (buck) and greater for $D>0.5$ (boost); the polarity is inverted.
In a buck-boost converter, at what duty cycle does $|V_o| = V_{in}$?
At $D = 0.5$, since $\left|\frac{V_o}{V_{in}}\right| = \frac{D}{1-D} = \frac{0.5}{0.5} = 1$.
Why is the basic buck-boost converter said to have inverted output polarity?
Because of the way the inductor delivers its stored energy to the output during the OFF interval, the output voltage is negative with respect to the common (input) ground reference.
In a buck-boost converter, what is the inductor voltage during the ON interval?
During ON, the inductor is connected directly across the source: $v_L = V_{in}$, and current rises with slope $\frac{V_{in}}{L}$ (diode reverse-biased).
In a buck-boost converter, what is the inductor voltage during the OFF interval?
During OFF, the inductor discharges into the output: $v_L = V_o$ (negative), and the diode conducts to transfer energy to the load and capacitor.
What distinguishes Continuous Conduction Mode (CCM) from Discontinuous Conduction Mode (DCM) in a DC-DC converter?
In CCM the inductor current never reaches zero during a switching cycle; in DCM the inductor current falls to zero for part of each cycle (typically at light load), changing the voltage conversion ratio so it depends on load.
What is the volt-second balance (inductor) principle used to analyze DC-DC converters in steady state?
In steady state the average inductor voltage over one switching period is zero: $$\int_0^{T_s} v_L\,dt = 0$$ i.e., (volt-seconds during ON) = (volt-seconds during OFF). This yields the converter's $V_o/V_{in}$ ratio.
What is capacitor charge (amp-second) balance in steady-state converter analysis?
In steady state the average capacitor current over one switching period is zero: $$\int_0^{T_s} i_C\,dt = 0$$ so the net charge delivered to the capacitor each cycle is zero, keeping output voltage constant.
Define duty cycle $D$ for a switching converter.
The fraction of the switching period for which the main switch is ON: $$D = \frac{t_{on}}{T_s} = t_{on}\,f_s$$ where $T_s$ is the switching period and $f_s$ the switching frequency. $0 \leq D \leq 1$.
Compare the conversion ratios of buck, boost, and buck-boost converters in CCM.
Buck: $\frac{V_o}{V_{in}} = D$ (step-down). Boost: $\frac{V_o}{V_{in}} = \frac{1}{1-D}$ (step-up). Buck-boost: $\frac{V_o}{V_{in}} = -\frac{D}{1-D}$ (step up or down, inverted polarity).
GATE Electrical Engineering Power Electronics FAQ
What is in the GATE Electrical Engineering Power Electronics syllabus?
GATE Electrical Engineering Power Electronics is split into 9 chapters: Static V-I characteristics and firing/gating circuits, DC to DC conversion, Single and three-phase configuration of uncontrolled rectifiers, Voltage and Current commutated Thyristor based converters, Bidirectional ac to dc voltage source converters, Magnitude and Phase of line current harmonics for uncontrolled and thyristor based converters, Power factor and Distortion Factor of ac to dc converters, Single-phase and three-phase voltage and current source inverters and Sinusoidal pulse width modulation. Together they contain 6 topics.
How many chapters are in GATE Electrical Engineering Power Electronics?
9 chapters, containing 6 topics. The largest chapter is Static V-I characteristics and firing/gating circuits, with 3 topics.
Are there flashcards for GATE Electrical Engineering Power Electronics?
Yes — a 51-card Power Electronics deck, printed in full in the flashcards section of this page and available in the Examius app with spaced repetition. The free plan covers one exam of your choice, including its flashcards; Examius Pro, a one-time purchase, unlocks every other exam and deck.